On Fri, 19 Apr 2019 20:43:17 +0100, Dreamcat4 wrote: > Awesome thanks! > Just to reminder that of my system specs, i have this ASUS maximus ix > apex (z270) motherboard, and both my ram kits, one a crucial ballistix > (BLS2K16G4D30AESB), the other a g.skill trident-z (F4-3200C15-16GTZ), > neither decoded with this motherboard. > > Well compiled it, tried just tried now, and with the trident-z kit, > and decode-dimms.new (my download of the newer online version of this > script), and works! All credits go to Jarkko really. His tests made me see what was in front of me since the beginning but just couldn't see. Or maybe it was just too silly for me to imagine it was possible... > Will need to reboot and double check for the Cruicial kit, which will > be coming shortly, in my next message. > > Here is the output from the trident-z kit > > $ sudo ./decode-dimms.new In the future I advise passing "--side-by-side --merge-cells"... Makes the output easier to read. > # decode-dimms version $Revision$ > > Memory Serial Presence Detect Decoder > By Philip Edelbrock, Christian Zuckschwerdt, Burkart Lingner, > Jean Delvare, Trent Piepho and others > > > Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/2-0050 > Guessing DIMM is in bank 1 > > ---=== SPD EEPROM Information ===--- > EEPROM CRC of bytes 0-125 OK (0x7EAF) > # of bytes written to SDRAM EEPROM 384 > Total number of bytes in EEPROM 512 > Fundamental Memory type DDR4 SDRAM > SPD Revision 1.0 > Module Type UDIMM > EEPROM CRC of bytes 128-253 OK (0xDF74) > > ---=== Memory Characteristics ===--- > Maximum module speed 2132 MHz (PC4-17000) > Size 16384 MB > Banks x Rows x Columns x Bits 16 x 16 x 10 x 64 > SDRAM Device Width 8 bits > Ranks 2 > Rank Mix Symmetrical > Primary Bus Width 64 bits > AA-RCD-RP-RAS (cycles) 15-15-15-36 > Supported CAS Latencies 16T, 15T, 14T, 13T, > 12T, 11T, 10T > > ---=== Timings at Standard Speeds ===--- > AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-31 > AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-27 > > ---=== Timing Parameters ===--- > Minimum Cycle Time (tCKmin) 0.938 ns > Maximum Cycle Time (tCKmax) 1.500 ns > Minimum CAS Latency Time (tAA) 13.750 ns > Minimum RAS to CAS Delay (tRCD) 13.750 ns > Minimum Row Precharge Delay (tRP) 13.750 ns > Minimum Active to Precharge Delay (tRAS) 33.000 ns > Minimum Active to Auto-Refresh Delay (tRC) 46.750 ns > Minimum Recovery Delay (tRFC1) 350.000 ns > Minimum Recovery Delay (tRFC2) 260.000 ns > Minimum Recovery Delay (tRFC4) 160.000 ns > Minimum Four Activate Window Delay (tFAW) 21.000 ns > Minimum Row Active to Row Active Delay (tRRD_S) 3.700 ns > Minimum Row Active to Row Active Delay (tRRD_L) 5.300 ns > Minimum CAS to CAS Delay (tCCD_L) 5.625 ns > > ---=== Other Information ===--- > Package Type Monolithic > Maximum Activate Count Unlimited > Post Package Repair One row per bank group > Soft PPR Not Supported > Module Nominal Voltage 1.2 V > Thermal Sensor No > > ---=== Physical Characteristics ===--- > Module Height 32 mm > Module Thickness 2 mm front, 2 mm back > Module Reference Card B revision 1 > > ---=== Manufacturer Data ===--- > Module Manufacturer G Skill Intl > DRAM Manufacturer Samsung > Part Number F4-3200C15-16GTZ > > > Decoding EEPROM: /sys/bus/i2c/drivers/ee1004/2-0052 > Guessing DIMM is in bank 3 > > ---=== SPD EEPROM Information ===--- > EEPROM CRC of bytes 0-125 OK (0x7EAF) > # of bytes written to SDRAM EEPROM 384 > Total number of bytes in EEPROM 512 > Fundamental Memory type DDR4 SDRAM > SPD Revision 1.0 > Module Type UDIMM > EEPROM CRC of bytes 128-253 OK (0xDF74) > > ---=== Memory Characteristics ===--- > Maximum module speed 2132 MHz (PC4-17000) > Size 16384 MB > Banks x Rows x Columns x Bits 16 x 16 x 10 x 64 > SDRAM Device Width 8 bits > Ranks 2 > Rank Mix Symmetrical > Primary Bus Width 64 bits > AA-RCD-RP-RAS (cycles) 15-15-15-36 > Supported CAS Latencies 16T, 15T, 14T, 13T, > 12T, 11T, 10T > > ---=== Timings at Standard Speeds ===--- > AA-RCD-RP-RAS (cycles) as DDR4-1866 13-13-13-31 > AA-RCD-RP-RAS (cycles) as DDR4-1600 11-11-11-27 > > ---=== Timing Parameters ===--- > Minimum Cycle Time (tCKmin) 0.938 ns > Maximum Cycle Time (tCKmax) 1.500 ns > Minimum CAS Latency Time (tAA) 13.750 ns > Minimum RAS to CAS Delay (tRCD) 13.750 ns > Minimum Row Precharge Delay (tRP) 13.750 ns > Minimum Active to Precharge Delay (tRAS) 33.000 ns > Minimum Active to Auto-Refresh Delay (tRC) 46.750 ns > Minimum Recovery Delay (tRFC1) 350.000 ns > Minimum Recovery Delay (tRFC2) 260.000 ns > Minimum Recovery Delay (tRFC4) 160.000 ns > Minimum Four Activate Window Delay (tFAW) 21.000 ns > Minimum Row Active to Row Active Delay (tRRD_S) 3.700 ns > Minimum Row Active to Row Active Delay (tRRD_L) 5.300 ns > Minimum CAS to CAS Delay (tCCD_L) 5.625 ns > > ---=== Other Information ===--- > Package Type Monolithic > Maximum Activate Count Unlimited > Post Package Repair One row per bank group > Soft PPR Not Supported > Module Nominal Voltage 1.2 V > Thermal Sensor No > > ---=== Physical Characteristics ===--- > Module Height 32 mm > Module Thickness 2 mm front, 2 mm back > Module Reference Card B revision 1 > > ---=== Manufacturer Data ===--- > Module Manufacturer G Skill Intl > DRAM Manufacturer Samsung > Part Number F4-3200C15-16GTZ > > > Number of SDRAM DIMMs detected and decoded: 2 Looks all pretty good :) > [id:~] $ > > > A quick recap of what Jean has changed in the ee1004.c This was only for testing... I'll post clean patches soon. Thanks for testing so quickly, appreciated. -- Jean Delvare SUSE L3 Support
