Re: [RFT v4 6/8] ARM: dts: exynos: Remove MCT subnode for interrupt map on Exynos5250

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On 23.09.2019 18:14, Krzysztof Kozlowski wrote:
> Multi Core Timer node has interrupts routed to two different parents -
> GIC and combiner.  This was modeled with a interrupt-map within a
> subnode but can be expressed in an easier and more common way, directly
> in the node itself.
>
> Signed-off-by: Krzysztof Kozlowski <krzk@xxxxxxxxxx>
Tested-by: Marek Szyprowski <m.szyprowski@xxxxxxxxxxx>

Works fine on Arndale and Snow boards.

>
> ---
>
> Not tested.
>
> Changes since v3:
> 1. Use interrupts-extended instead of interrupts-map.
> ---
>   arch/arm/boot/dts/exynos5250.dtsi | 23 ++++++-----------------
>   1 file changed, 6 insertions(+), 17 deletions(-)
>
> diff --git a/arch/arm/boot/dts/exynos5250.dtsi b/arch/arm/boot/dts/exynos5250.dtsi
> index 7a01349317a3..a549eafd2c64 100644
> --- a/arch/arm/boot/dts/exynos5250.dtsi
> +++ b/arch/arm/boot/dts/exynos5250.dtsi
> @@ -236,25 +236,14 @@
>   		timer@101c0000 {
>   			compatible = "samsung,exynos4210-mct";
>   			reg = <0x101C0000 0x800>;
> -			interrupt-controller;
> -			#interrupt-cells = <2>;
> -			interrupt-parent = <&mct_map>;
> -			interrupts = <0 0>, <1 0>, <2 0>, <3 0>,
> -				     <4 0>, <5 0>;
>   			clocks = <&clock CLK_FIN_PLL>, <&clock CLK_MCT>;
>   			clock-names = "fin_pll", "mct";
> -
> -			mct_map: mct-map {
> -				#interrupt-cells = <2>;
> -				#address-cells = <0>;
> -				#size-cells = <0>;
> -				interrupt-map = <0x0 0 &combiner 23 3>,
> -						<0x1 0 &combiner 23 4>,
> -						<0x2 0 &combiner 25 2>,
> -						<0x3 0 &combiner 25 3>,
> -						<0x4 0 &gic 0 120 IRQ_TYPE_LEVEL_HIGH>,
> -						<0x5 0 &gic 0 121 IRQ_TYPE_LEVEL_HIGH>;
> -			};
> +			interrupts-extended = <&combiner 23 3>,
> +					      <&combiner 23 4>,
> +					      <&combiner 25 2>,
> +					      <&combiner 25 3>,
> +					      <&gic 0 120 IRQ_TYPE_LEVEL_HIGH>,
> +					      <&gic 0 121 IRQ_TYPE_LEVEL_HIGH>;
>   		};
>   
>   		pinctrl_0: pinctrl@11400000 {

Best regards
-- 
Marek Szyprowski, PhD
Samsung R&D Institute Poland




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