Let's make things consistent with other bindings and clarify the expected active state. Signed-off-by: Boris Brezillon <boris.brezillon@xxxxxxxxxxxxx> --- Changes in v2: * New patch --- Documentation/devicetree/bindings/mtd/ingenic,jz4780-nand.txt | 3 ++- 1 file changed, 2 insertions(+), 1 deletion(-) diff --git a/Documentation/devicetree/bindings/mtd/ingenic,jz4780-nand.txt b/Documentation/devicetree/bindings/mtd/ingenic,jz4780-nand.txt index c02259353327..4cbe13f94564 100644 --- a/Documentation/devicetree/bindings/mtd/ingenic,jz4780-nand.txt +++ b/Documentation/devicetree/bindings/mtd/ingenic,jz4780-nand.txt @@ -30,7 +30,8 @@ Optional children node properties: - nand-ecc-strength: ECC strength (max number of correctable bits). - nand-ecc-mode: String, operation mode of the NAND ecc mode. "hw" by default - nand-on-flash-bbt: boolean to enable on flash bbt option, if not present false -- rb-gpios: GPIO specifier for the busy pin. +- rb-gpios: GPIO specifier for the ready/busy pin. The active state (ready) + should be high unless the signal is inverted. - wp-gpios: GPIO specifier for the write protect pin. Optional child node of NAND chip nodes: -- 2.25.4
