Add optional max expected current property which allows calibrating the ina sensor in order to achieve requested measure scale. Document the changes in Documentation/hwmon/ina2xx. Signed-off-by: Maciej Purski <m.purski@xxxxxxxxxxx> --- Documentation/devicetree/bindings/hwmon/ina2xx.txt | 4 +++- Documentation/hwmon/ina2xx | 3 +++ 2 files changed, 6 insertions(+), 1 deletion(-) diff --git a/Documentation/devicetree/bindings/hwmon/ina2xx.txt b/Documentation/devicetree/bindings/hwmon/ina2xx.txt index 02af0d9..9268595 100644 --- a/Documentation/devicetree/bindings/hwmon/ina2xx.txt +++ b/Documentation/devicetree/bindings/hwmon/ina2xx.txt @@ -14,11 +14,13 @@ Optional properties: - shunt-resistor Shunt resistor value in micro-Ohm - +- ti-max-expected-current-milliamp + Max expected current value in mA Example: ina220@44 { compatible = "ti,ina220"; reg = <0x44>; shunt-resistor = <1000>; + ti-max-expected-current-milliamp = <3000>; }; diff --git a/Documentation/hwmon/ina2xx b/Documentation/hwmon/ina2xx index cfd31d9..30620e8 100644 --- a/Documentation/hwmon/ina2xx +++ b/Documentation/hwmon/ina2xx @@ -55,6 +55,9 @@ The shunt value in micro-ohms can be set via platform data or device tree at compile-time or via the shunt_resistor attribute in sysfs at run-time. Please refer to the Documentation/devicetree/bindings/i2c/ina2xx.txt for bindings if the device tree is used. +The max expected current value in miliamp can be set via platform data +or device tree at compile-time or via currX_max attribute in sysfs +at run-time. Additionally ina226 supports update_interval attribute as described in Documentation/hwmon/sysfs-interface. Internally the interval is the sum of -- 2.7.4 -- To unsubscribe from this list: send the line "unsubscribe linux-samsung-soc" in the body of a message to majordomo@xxxxxxxxxxxxxxx More majordomo info at http://vger.kernel.org/majordomo-info.html