Re: [PATCH v2 01/15] mtd: nand: Add max_bad_eraseblocks_per_lun info to memorg

[Emil Lenngren <emil.lenngren@xxxxxxxxx>]

Hi Miquel,

>  static const struct spinand_info macronix_spinand_table[] = {
>         SPINAND_INFO("MX35LF1GE4AB", 0x12,
> -                    NAND_MEMORG(1, 2048, 64, 64, 1024, 1, 1, 1),
> +                    NAND_MEMORG(1, 2048, 64, 64, 1024, 40, 1, 1, 1),
>                      NAND_ECCREQ(4, 512),
>                      SPINAND_INFO_OP_VARIANTS(&read_cache_variants,
>                                               &write_cache_variants,
> @@ -103,7 +103,7 @@ static const struct spinand_info macronix_spinand_table[] = {
>                      SPINAND_ECCINFO(&mx35lfxge4ab_ooblayout,
>                                      mx35lf1ge4ab_ecc_get_status)),
>         SPINAND_INFO("MX35LF2GE4AB", 0x22,
> -                    NAND_MEMORG(1, 2048, 64, 64, 2048, 2, 1, 1),
> +                    NAND_MEMORG(1, 2048, 64, 64, 2048, 20, 2, 1, 1),
>                      NAND_ECCREQ(4, 512),

Maybe a bit late to the discussion, but shouldn't 20 and 40 be swapped
here, i.e. isn't it the larger flash that has more max bad blocks than
the smaller one?

/Emil

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