On 11. 06. 21 10:53, Greg Kroah-Hartman wrote:
On Fri, Jun 11, 2021 at 07:26:52AM +0200, Jiri Prchal wrote:
+Description:
+ Contains the FRAM binary data. Same as EEPROM, just another file
+ name to indicate that it employs ferroelectric process.
+ It performs write operations at bus speed - no write delays, capable
+ of 10^14 read/write cycles and 151 years data retention.
Are you sure of these statistics? Don't promise something here that
might not be true, this is not a marketing document :)
Just copied from datasheet. Is write at bus speed OK? And about others:
much more then EEPROM would be OK? Or don't write about it?
